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 SD1053C..L Series
Vishay High Power Products
Fast Recovery Diodes (Hockey PUK Version), 920/1050 A
FEATURES
* * * * * * * * * * * * *
920/1050 A
DO-200AB (B-PUK)
PRODUCT SUMMARY
IF(AV)
High power FAST recovery diode series 2.0 to 3.0 s recovery time High voltage ratings up to 3000 V RoHS High current capability COMPLIANT Optimized turn-on and turn-off characteristics Low forward recovery Fast and soft reverse recovery Press PUK encapsulation Case style conform to JEDEC DO-200AB (B-PUK) Maximum junction temperature 150 C RoHS compliant Lead (Pb)-free Designed and qualified for industrial level
TYPICAL APPLICATIONS
* Snubber diode for GTO * High voltage freewheeling diode * Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS SD1053C..L S20 1050 IF(AV) IF(RMS) IFSM VRRM trr TJ 50 Hz 60 Hz Range TJ Ths 55 1940 15 000 15 700 1800 to 2500 2.0 25 - 40 to 150 S30 920 55 1700 13 000 13 610 1800 to 3000 3.0 V s C A UNITS A C
ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS
TYPE NUMBER VOLTAGE CODE 18 SD1053C..S20L 22 25 18 22 SD1053C..S30L 25 28 30 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 1800 2200 2500 1800 2200 2500 2800 3000 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 1900 2300 2600 1900 2300 2600 2900 3100 50 IRRM MAXIMUM AT TJ = TJ MAXIMUM mA
Document Number: 93167 Revision: 14-May-08
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SD1053C..L Series
Vishay High Power Products
FORWARD CONDUCTION
PARAMETER Maximum average forward current at heatsink temperature Maximum RMS forward current SYMBOL TEST CONDITIONS 180 conduction, half sine wave Double side (single side) cooled 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum forward voltage drop I2t VF(TO)1 VF(TO)2 rf1 rf2 VFM No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied SD1053C..L S20 S30 UNITS A C
Fast Recovery Diodes (Hockey PUK Version), 920/1050 A
IF(AV) IF(RMS)
1050 (450) 920 (390) 55 (85) 1940 15 000 15 700 12 620 55 (85) 1700 13 000 13 610 10 930 11 450 845 772 598 546 8450 1.51 1.67 0.50
A
Sinusoidal half wave, initial TJ = TJ maximum
13 210 1125 1027 796 727 11 250 1.34 1.48 0.37 0.33 1.90
kA2s
t = 0.1 to 10 ms, no voltage reapplied (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum (I > x IF(AV)), TJ = TJ maximum (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum (I > x IF(AV)), TJ = TJ maximum Ipk = 1500 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave
kA2s V
m 0.45 2.26 V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE AT TJ = 25 C CODE trr AT 25 % IRRM (s) 2.0 3.0 1000 100 - 50 TEST CONDITIONS Ipk SQUARE PULSE (A) TYPICAL VALUES AT TJ = 150 C
IFM
dI/dt (A/s)
Vr (V)
trr AT 25 % IRRM (s) 4.0 4.5
Qrr (C) 400 550
Irr (A) 180 230
dir dt
trr t Qrr IRM(REC)
S20 S30
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER Maximum junction operating and storage temperature range Maximum thermal resistance, case junction to heatsink Mounting force, 10 % Approximate weight Case style See dimensions - link at the end of datasheet SYMBOL TJ, TStg RthJ-hs DC operation single side cooled DC operation double side cooled TEST CONDITIONS VALUES - 40 to 150 0.073 0.031 14 700 (1500) 255 UNITS C K/W N (kg) g
DO-200AB (B-PUK)
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Document Number: 93167 Revision: 14-May-08
SD1053C..L Series
Fast Recovery Diodes (Hockey PUK Version), 920/1050 A
RthJ-hs CONDUCTION
CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION SINGLE SIDE 0.009 0.011 0.014 0.020 0.036 DOUBLE SIDE 0.008 0.011 0.014 0.021 0.036 RECTANGULAR CONDUCTION SINGLE SIDE 0.006 0.011 0.015 0.021 0.036 DOUBLE SIDE 0.006 0.011 0.015 0.022 0.036 TJ = TJ maximum K/W TEST CONDITIONS UNITS
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Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Maximum Allowable Heatsink Temp erature (C)
Maximum Allowable Heatsink T emperature (C)
160 140 120
S D1053C..S 20L S eries (S ingle S ide Cooled) RthJ-hs (DC) = 0.073 K/ W
160 140 120 100 80 60 40 20 0 100 200
S D1053C..S 30L S eries (S ingle S ide Cooled) RthJ-hs (DC) = 0.073 K/ W
Conduction Angle
Conduction Angle
100 80 60 40 0 100 200 300 400 500 600 700 Average Forward Current (A) 180 90 120
30
60
30
60
90 120 180
300
400
500
600
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Maximum Allowable Heatsink T emperature (C)
160 140 120 100
Conduction Period
Maximum Allowable Heatsink T emperature (C)
160 140 120 100
Conduc tion Period
S D1053C..S 20L S eries (S ingle S ide Cooled) RthJ-hs (DC) = 0.073 K/ W
S D1053C..S 30L S eries (S ingle S ide Cooled) R thJ-hs (DC) = 0.073 K/ W
80 60 40 20 0 0 200 400 600 800 1000 Average Forward Current (A) 30 60 90 120 180 DC
80 60 40 20 0 200 400 600 800 1000 1200 Average Forward Current (A) 30 60 90 120 180 DC
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Document Number: 93167 Revision: 14-May-08
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SD1053C..L Series
Vishay High Power Products
Maximum Allowable Heatsink T emperature (C)
Fast Recovery Diodes (Hockey PUK Version), 920/1050 A
Maximum Allowable Heatsink T emperature (C)
160 140 120 100 80 30 60 40 20 DC 0 0 400 800 1200 1600 2000 Average Forward Current (A) 60 90 120 180
Conduction Period
160 140 120 100
S D1053C..S 20L S eries (Double S Cooled) ide R thJ-hs (DC) = 0.031 K/ W
S D1053C..S 30L S eries (Double S Cooled) ide RthJ-hs (DC) = 0.031 K/ W
Conduction Angle
80 60 40 20 0 0 200 400 600 800 1000 1200 1400 Average Forward Current (A) 30 60
90
120 180
Fig. 5 - Current Ratings Characteristics
Fig. 8 - Current Ratings Characteristics
Maximum Allowable Heats T ink emperature (C)
140 120 100 80 60 40 20 0 0 400 30
S D1053C..S 20L S eries (Double S Cooled) ide RthJ-hs (DC) = 0.031 K/ W
Maximum Average F orward Power Los (W) s
160
3500 3000 2500 2000 1500 1000 500 0 0 200 400 600 800 1000 1200 1400 Average Forward Current (A)
Conduction Angle
180 120 90 60 30
RMSLimit
Conduction Period
60
90
120
180 DC
S D1053C..S 20L S eries T = 150C J
800
1200
1600
2000
Average Forward Current (A)
Fig. 6 - Current Ratings Characteristics
Fig. 9 - Forward Power Loss Characteristics
Maximum Allowable Heatsink T emperature (C)
160 140 120 100
S D1053C..S 30L S eries (Double S Cooled) ide RthJ-hs (DC) = 0.031 K/ W
Maximum Average Forward Power Loss (W)
4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 400 800 1200 1600 2000 Average Forward Current (A) S D1053C..S 20L S eries TJ = 150C DC 180 120 90 60 30 RMSLimit
Conduction Period
Conduction Angle
80 60 40 20 30 0 0 200 400 600 800 1000 1200 Average Forward Current (A) 90 120 60 180
Fig. 7 - Current Ratings Characteristics
Fig. 10 - Forward Power Loss Characteristics
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Document Number: 93167 Revision: 14-May-08
SD1053C..L Series
Fast Recovery Diodes (Hockey PUK Version), 920/1050 A
Maximum Average F orward Power Loss (W)
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Peak Half S Wave F ine orward Current (A)
3200 2800 2400 2000 1600 1200
Conduction Angle
16000 14000
180 120 90 60 30
RMS Limit
Maximum Non R epetitive S urge Current Versus Pulse T rain Duration. Initial T = 150 C J No Voltage Reapplied 12000 Rated VRRM Reapplied 10000 8000 6000 4000 2000 0.01 S D1053C..S 20L S eries
800 400 0 0 200 400 600 800 1000 1200 Average Forward Current (A) S D1053C..S 30L S eries T = 150C J
0.1 Pulse T rain Duration (s)
1
Fig. 11 - Forward Power Loss Characteristics
Fig. 14 - Maximum Non-Repetitive Surge Current
Maximum Average F orward P ower Loss (W)
Peak Half S Wave Forward Current (A) ine
4500 4000 3500 3000 2500 RMS Limit 2000 1500 1000 500 0 0 400 800 1200 1600 2000 Average Forward Current (A)
Conduction Period
12000 11000 10000 9000 8000 7000 6000 5000 4000 3000 1
DC 180 120 90 60 30
At Any Rated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 150C J @60 Hz 0.0083 s @50 Hz 0.0100 s
S D1053C..S 30L S eries T = 150C J
S D1053C..S 30L S eries 10 100
Number Of Equa l Amplitude Half Cyc le Current Pulses (N)
Fig. 12 - Forward Power Loss Characteristics
Fig. 15 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
13000 12000 11000 10000 9000 8000 7000 6000 5000 4000 3000 0.01 S D1053C..S 30L S eries 0.1 Pulse T rain Dura tion (s) 1
Peak Half S Wave Forward Current (A) ine
Peak Half S Wave Forward Current (A) ine
14000 13000 12000 11000 10000 9000 8000 7000 6000 5000 4000 1
At Any Rated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 150 C J @60 Hz 0.0083 s @50 Hz 0.0100 s
Maximum Non R epetitive S e Current urg Versus Pulse T rain Duration. Initial T = 150 C J No Voltag e Reapplied Rated VRRM Reapplied
S D1053C..S 20L S eries
10
100
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
Fig. 13 - Maximum Non-Repetitive Surge Current
Fig. 16 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
Document Number: 93167 Revision: 14-May-08
For technical questions, contact: ind-modules@vishay.com
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SD1053C..L Series
Vishay High Power Products
Fast Recovery Diodes (Hockey PUK Version), 920/1050 A
10000
Instantaneous Forward Current (A)
T = 25C J T = 150C J
10000 Instantaneous Forward Current (A)
T = 25C J T = 150C J
1000
1000
S D1053C..S 20L S eries
S D1053C..S 30L S eries 100 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 Ins tantaneous Forward Voltage (V)
100 1 1.5 2 2.5 3 3.5 4 4.5 5 Instantaneous Forward Voltage (V)
Fig. 17 - Forward Voltage Drop Characteristics
Fig. 18 - Forward Voltage Drop Characteristics
T rans ient Thermal Impedance Z thJ-hs (K/ W)
0.1 S D1053C..S S 20/ 30L S eries
0.01
S teady S tate Value R thJ-hs = 0.073 K/ W (S ingle S ide Cooled) R thJ-hs = 0.031 K/ W (Double S ide Cooled) (DC Operation)
0.001 0.001
0.01
0.1
1
10
100
S quare Wave Pulse Duration (s)
Fig. 19 - Thermal Impedance ZthJ-hs Characteristic
100
V
FP
160
V
I
80 Forward Recovery (V)
T = 150C J Forward Recovery (V) 120
FP
I
T = 150C J
60
80
40
T = 25C J
T = 25C J
40 S D1053C..S 30L S eries 0
20 S D1053C..S 20L S eries 0 0 400 800 1200 1600 2000 Rate Of Rise Of Forward Current - di/ dt (A/ us ) 0 400 800
1200
1600
2000
R ate Of R Of Forward Current - di/ dt (A/ us) ise
Fig. 20 - Typical Forward Recovery Characteristics
Fig. 21 - Typical Forward Recovery Characteristics
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Document Number: 93167 Revision: 14-May-08
SD1053C..L Series
Fast Recovery Diodes (Hockey PUK Version), 920/1050 A
Maximum R everse Recovery Time - T (s) rr 6.5 6 5.5 5 4.5 4 3.5 3 2.5 10
I FM= 1500 A S Pulse ine 1000 A 500 A
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Maximum Reverse Rec overy T ime - T (s) rr
9 8.5 8 7.5 7 6.5 6 5.5 5 4.5 4 3.5 10 100 1000
I FM = 1500 A S Pulse ine 1000 A 500 A
S D1053C..S 20L S eries T = 150 C; V r > 100V J
S D1053C..S S 30L eries T = 150 C; V r > 100V J
100
1000
Rate Of Fall Of Forward Current - di/dt (A/ s)
Rate Of Fa ll Of Forward Current - di/ dt (A/ s)
Fig. 22 - Recovery Time Characteristics
Fig. 25 - Recovery Time Characteristics
Maximum Reverse R overy Charge - Qrr (C) ec
1000 900 800 700 600 500 400 300 200 100 0 0 50 100 150 200 250 300 S D1053C..S 20L S eries T = 150 C; Vr > 100V J
1000 A I FM= 1500 A S ine Pulse
Maximum R everse Rec overy Charge - Qrr (C)
1600 1400 1200 1000 800 600 400 200 0 0 50 100 150 200 250 300 S D1053C..S 30L S eries T = 150C; V r > 100V J
I FM = 1500 A S Pulse ine 1000 A 500 A
500 A
Rate Of Fall Of Forward Current - di/ dt (A/s)
Rate Of Fall Of Forward Current - di/ dt (A/ s)
Fig. 23 - Recovery Charge Characteristics
Fig. 26 - Recovery Charge Characteristics
Maximum Reverse Recovery Current - Irr (A)
I
450 400 350 300 250 200 150 100 50 0 0
= 1500 A FM S Pulse ine 1000 A 500 A
Maximum Reverse R overy Current - Irr (A) ec
500
700
I FM = 1500 A
600 500
500 A
S Pulse ine 1000 A
400 300 200 100 0 0 50 100 150 200 250 300 S D1053C..S 30L S eries T = 150C; V r > 100V J
S D1053C..S 20L S eries T = 150 C; Vr > 100V J 50 100 150 200 250 300
Rate Of Fa ll Of Forward Current - d i/ dt (A/ s)
Rate Of Fall Of Forward Current - di/ dt (A/ s)
Fig. 24 - Recovery Current Characteristics
Fig. 27 - Recovery Current Characteristics
Document Number: 93167 Revision: 14-May-08
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SD1053C..L Series
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Fast Recovery Diodes (Hockey PUK Version), 920/1050 A
1E4
10 joules p er pulse 2 1 0.6 0.4 6
1E4
4
Peak Forward Current (A)
Peak Forward Current (A)
1500 2000 3000 4000 6000 10000 15000 20000
100 50 Hz 400 200 1000 600
1E3
0.2 0.08 S D1053C..S 20L S eries S inusoidal Pulse T = 150C, VRRM = 800V J dv/ dt = 1000V/ s
1E3
tp
tp
S D1053C..S 20L S eries T rapezoidal Pulse T = 55C, VRRM = 800V C dv/ dt = 1000V/ us, di/ dt = 300A/ us
1E2 1E1
1E2
1E3
1E4
1E2 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 28 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
2000 3000 4000 6000 1000 400 200 100 50 Hz
Fig. 31 - Frequency Characteristics
1E4
Peak Forward Current (A)
Peak F orward Current (A)
6 4 2 1
10 joules per p ulse
1E3
10000 15000 tp 20000 S D1053C..S 20L S eries S inusoida l Pulse T = 55C, VRRM = 800V C dv/ d t = 1000V/ us
1E3
0.4
0.8 0.6
tp
SD1053C..S 20L S eries T rapezoidal Pulse T = 150C, VRRM = 800V J d v/ dt = 1000V/ s, di/ dt = 100A/ s
1E2 1E1
1E2
1E3
1E4
1E2 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 29 - Frequency Characteristics
Fig. 32 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
1E4
Peak Forward Current (A)
Peak Forward Current (A)
10 joules p er p ulse 6 4 2
2000 4000
400 200 1000 600
100 50 Hz
1E3
0.6 0.4
1 0.8
1E3
6000 10000 15000 20000 tp S D1053C..S 20L Series T rap ezoid al Pulse T = 55C, VRRM = 800V C d v/ dt = 1000V/us d i/ dt = 100A/ us
tp
S D1053C..S 20L S eries T rapezoidal Pulse TJ = 150C, VRRM = 800V dv/ dt = 1000V/ s, di/ dt = 300A/ s
1E2 1E1
1E2
1E3
1E4
1E2 1E1
1E2
1E3
1E4
Puls Basewidth (s) e
Pulse Basewidth (s)
Fig. 30 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 33 - Frequency Characteristics
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Document Number: 93167 Revision: 14-May-08
SD1053C..L Series
Fast Recovery Diodes (Hockey PUK Version), 920/1050 A
1E4
10 joules per pulse 6
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1E4
Peak Forward Current (A)
2 1 0.6
Peak Forward Current (A)
4
1000
600
400
200
100 50 Hz
1E3
0.4 0.2
1E3
4000 6000 10000
1500 2000 3000 S D1053C..S 30L S eries T pezoidal Pulse ra T = 55C, VRRM = 1000V C dv/ dt = 1000V/ us, di/ dt = 300A/ us
tp
S D1053C..S 30L Series S inusoidal Pulse TJ = 150C, VRRM = 1000V dv/ d t = 1000V/ s
tp 15000
1E2 1E1
1E2
1E3
1E4
1E2 1E1
1E2
1E3
1E4
Puls Basewidth (s) e
Pulse Basewidth (s)
Fig. 34 - Maximum Total Energy Loss Per Pulse Characteristics
1E 4
Fig. 37 - Frequency Characteristics
1E4
Peak F orward Current (A)
2000 3000 4000
1000
Peak Forward Current (A)
400 200 100 50 Hz
4 2
6
10 joules p er pulse
1E 3
6000 10000 15000 20000 tp S D1053C..S 30L S eries S inusoidal Pulse T = 55C, VRRM = 1000V C d v/ dt = 1000V/us
1E3
0.6
0.8
1
tp
S D1053C..S 30L S eries T rap ezoid al Pulse T = 150C, VRRM = 1000V J dv/ dt = 1000V/ s, di/ dt = 100A/ s
1E 2 1E 1
1E 2
1E 3
1E 4
1E2 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Puls Basewidth (s) e
Fig. 35 - Frequency Characteristics
Fig. 38 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
1E4
Peak Forward Current (A)
Peak Forward Current (A)
10 joules per p ulse 6 4 2
1E3
1 0.8 0.6 S D1053C..S 30L S eries T rapezoidal Pulse T = 150C, VRRM = 1000V J dv/ dt = 1000V/ s, di/ dt = 300A/ s
1E3
6000
1000 2000 3000 4000
600
100 400 200
50 Hz
10000 15000 tp
tp
1E2 1E1
1E2
1E3
1E4
1E2 1E1
S D1053C..S 30L S eries T rapezoidal Pulse T = 55C, VRRM = 1000V C dv/ dt = 1000V/ us, di/ dt = 100A/ us
1E2
1E3
1E4
Pulse Basewidth (s)
Puls Basewidth (s) e
Fig. 36 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 39 - Frequency Characteristics
Document Number: 93167 Revision: 14-May-08
For technical questions, contact: ind-modules@vishay.com
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SD1053C..L Series
Vishay High Power Products
ORDERING INFORMATION TABLE
Fast Recovery Diodes (Hockey PUK Version), 920/1050 A
Device code
SD
1
1 2 3 4 5 6 7
105
2 Diode
3
3
C
4
30
5
S30
6
L
7
Essential part number 3 = Fast recovery C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) trr code L = PUK case DO-200AB (B-PUK)
LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95246
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Document Number: 93167 Revision: 14-May-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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